图书简介
This book deals with the subject of secondary energy spectroscopy in the scanning electron microscope (SEM). The SEM is a widely used research instrument for scientific and engineering research and its low energy scattered electrons, known as secondary electrons, are used mainly for the purpose of nanoscale topographic imaging. This book demonstrates the advantages of carrying out precision electron energy spectroscopy of its secondary electrons, in addition to them being used for imaging. The book will demonstrate how secondary electron energy spectroscopy can transform the SEM into a powerful analytical tool that can map valuable material science information to the nanoscale, superimposing it onto the instrument’s normal topographic mode imaging. The book demonstrates how the SEM can then be used to quantify/identify materials, acquire bulk density of states information, capture dopant density distributions in semiconductor specimens, and map surface charge distributions.
Key Features:
o This is the only book that is dedicated to the subject of secondary electron energy spectroscopy in the scanning electron microscope
o This book provides detailed experimental results to demonstrate the kind of advantages that can be gained if secondary electron energy spectroscopy were to be carried out inside a scanning electron microscope
o This book provides a detailed historical review of the many different ways secondary electron energy spectroscopy has been tried in scanning electron microscopes
SE Energy Spectrometer Design; The Wide-angle Toroidal Energy Analyzer Attachment; Quantitative Material Contrast; Dopant Profiling and Semiconductor Characterization; Probing and Mapping Charge Distributions; Conclusions and Future Work;
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